HVPE of binary and ternary III-Nitride nanostructures and nanowires
Yamina Andre,
Institut Pascal, Clermont-Ferrand, France
Advances of quantum dots for lasers and single photon sources
Yasuhiko Arakawa,
University of Tokyo, Japan
Hybrid quantum dot in a nanowire systems
George Cirlin
AU RAS, ITMO University, Russia
Changing the properties of GaAs via strain engineering in core/shell nanowires
Emmanouil Dimakis,
Institute of Ion Beam Physics and Materials Research, Drezden, Germany
“Stopping” effect and its role in oscillations of truncation in III-V nanowires
Vladimir Dubrovskii,
ITMO University, Russia
New Opportunities at the European XFEL
Robert Feidenhans’l,
EXFEL, Hamburg, Germany
Novel compound semiconductor nanostructures for photonics
Anna Fontcuberta i Morral,
EPFL Lausanne
Nano and Microstructures for the Manipulation of THz Radiation
Andrew Gallant,
Durham University, UK
Using Bi for the formation of group-III arsenide nanostructures
Lutz Geelhaar,
PDI Berlin, Germany
The formation of truncated interfaces in nanowire growth
Frank Glas,
C2N, CNRS, Université Paris-Sud, Université Paris-Saclay, France
Self-catalyzed molecular beam epitaxy of GaAs nanowires for photonic applications
Teemu Hakkarainen,
Tampere University of Technology, Finland
Growth of III-V nanowires observed in situ by TEM
Jean-Christophe Harmand,
C2N, CNRS, Université Paris-Sud, Université Paris-Saclay, France
Composition control in ternary nanomaterials
Jonas Johansson,
Lund University, Sweden
Guided Nanowire Optoelectronics
Ernesto Joselevich,
Weizmann Institute of Science, Israel
Small angle X-ray scattering of a stretchable photonic crystal
Alexander Korsunsky,
Oxford University, UK
III-V Materials Development for Nanowire Photodetectors and Photovoltaics
Ray LaPierre,
McMaster University, Canada
Optical and phononic properties of nanowires on demand
Marta De Luca,
University of Basel, Switzerland
Group IV Nanowire Structure, Luminescence and Carrier Dynamics
Paul McIntyre,
Stanford University, USA
Intervalley mixing due to interfaces in semiconductor nanostructures
Michail Nestoklon,
Ioffe Institute, Russia
Quantum chemical modelling of epitaxial transformation of silicon to silicon carbide
Andrey Osipov,
Institute of Problems of Mechanical Engineering RAS, Russia
The MBE growth of oxides, such as Ga2O3 in the form of planar layers
Henning Riechert,
PDI Berlin, Germany
Low Temperature Plasma Deposition Processes: From Amorphous Silicon to Epitaxial Growth and Nanowires
Pere Roca,
Ecole Polytechnique, France
Dislocations in photonic heterostructures
Aleksei Romanov
ITMO University, Russia
Nitride nanowires on graphene for flexible optoelectronics
Maria Tchernycheva,
University Paris Sud, France
Self-assembly of ordered graphene quantum dot arrays
Jerry Tersoff,
IBM Research, Yorktown Heights, USA
Resonant Effects in Delayed Feedback Lasers
Evgeny Viktorov,
ITMO University, Russia
Evolvoble Nanomaterial Device Concept.
Dagou Zeze,
Durham University, UK
Self-assembled formation of GaN nanowires on amorphous substrates
Zbigniew Zytkiewicz,
Institute of Physics, Polish Academy of Sciences, Poland